Артикул TTF-EN-307
Брусковые модули T/R
Продукция TTF Electronic. Брусковые модули T/R. Характеристики — на странице серии.
- Категория
- Чипсетные решения, Чипсеты T/R
- Модель
- TTF-EN-307
| Model | Band | Arch. | Channel | Peak Power | RX Gain | Noise Figure | Phase Acc. | Att. Acc. | Size (mm) | Weight |
|---|---|---|---|---|---|---|---|---|---|---|
| 04X010 | X | ABF | 4 | ≥40dBm (10W) | ≥21dB | ≤2.5dB | RMS≤7.5° | ≤1dB | 89×52.6×9.5 | ≤110g |
| 04X020 | X | ABF | 4 | ≥43dBm (20W) | ≥21dB | ≤2.5dB | RMS≤7.5° | ≤1dB | 89×52.6×9.5 | ≤110g |
| 04Ku010 | Ku | ABF | 4 | ≥40dBm (10W) | ≥21dB | ≤3.2dB | RMS≤7.5° | ≤1dB | 75×41×8 | ≤100g |
| 04Ku020 | Ku | ABF | 4 | ≥43dBm (20W) | ≥24dB | ≤3.2dB | RMS≤7.5° | ≤1dB | 75×41×8 | ≤100g |
| 08X020D | X | DBF | 8 | ≥43dBm (20W) | ≥50dB | ≤2.8dB | RMS≤6° | ≤0.5dB | 120×100×11 | ≤700g |
| 08Ku020D | Ku | DBF | 8 | ≥43dBm (20W) | ≥50dB | ≤3.5dB | RMS≤6° | ≤0.5dB | 150×82×13 | ≤600g |
04X010
X-Band 4-Ch 10W
04X020
X-Band 4-Ch 20W
04Ku020
Ku-Band 4-Ch 20W
 X-Band 4-Ch 10W ABF 04X010 |
 X-Band 4-Ch 20W ABF 04X020 |
 X-Band 8-Ch 20W DBF 08X020D |
 Ku-Band 4-Ch 20W ABF 04Ku020 |
 Ku-Band 8-Ch 20W DBF 08Ku020D |
X-Band 4-Channel 10W T/R Module
Обзор
This product is an X-band analog T/R module featuring four channels, with a per-channel peak pulsed power of 10 W. It is manufactured using micro-assembly technology and mainly integrates a phase-and-amplitude multifunction chip, driver amplifier chip, GaN power amplifier chip, limiter chip, low-noise amplifier chip, circulator, and power modulation chip. The module offers high output power, excellent thermal conductivity, low noise, and low phase variation. It supports both pulsed and continuous-wave (CW) operating modes. The product is suitable for one-dimensional or twodimensional active phased array radar systems and supports customized development
Основные технические характеристики
|
➢ Operating Power Supply Voltage: +8.5V/+28V, +5V ➢ Operating Frequency: 9.0~10.5GHz ➢ Number of Elements: 4 ➢ 6-bit digital attenuator, Step size: 0.5 dB ➢ 6-bit phase shifter, Step size: 5.6° ➢ Receive Gain: ≥21dB ➢ Transmit Power: ≥ 40dBm ➢ Spurious Suppression: ≤-65dBc ➢ In-band Transmit Ripple: ≤±0.75dB |
➢ Pulse Output Droop: ≤1dB ➢ Port VSWR: ≤1.8 ➢ NF: ≤ 2.5dB(per channel) ➢ RMS Phase Accuracy: ≤7.5 ° ➢ RMS Attenuation Accuracy: ≤1dB ➢ T/R Switching time: ≤ 200ns ➢ Efficiency: ≥25%(at 30% duty cycle) ➢ Dimensions: 89mm×52.6mm×9.5mm ➢ Weight: ≤110g ➢ RF Interface: SMP-J |
|
Особенности
➢ High output power
➢ Excellent thermal conductivity
➢ Low noise performance
➢ Supports pulsed and continuouswave modes
➢ Customizable design
X-Band 4-Channel 20W T/R Module
Обзор
This product is an X-band analog T/R module featuring four channels, with a per-channel peak pulsed power of 20 W. It is manufactured using micro-assembly technology and mainly integrates a phase-and-amplitude multifunction chip, driver amplifier chip, GaN power amplifier chip, limiter chip, low-noise amplifier chip, circulator, and power modulation chip. The module offers high output power, excellent thermal conductivity, low noise, and low phase variation. It supports both pulsed and continuous-wave (CW) operating modes.The product is suitable for one-dimensional or twodimensional active phased array radar systems and supports customized development.
Основные технические характеристики
|
➢ Operating Power Supply Voltage: +28V, +5V ➢ Operating Frequency: 9.0~10.5GHz ➢ Number of Elements: 4 ➢ 6-bit digital attenuator, Step size: 0.5 dB ➢ 6-bit phase shifter, Step size: 5.6° ➢ Receive Gain: ≥21dB ➢ Transmit Power: ≥ 43dBm ➢ Spurious Suppression: ≤-65dBc ➢ In-band Transmit Ripple: ≤±0.75dB ➢ Pulse Output Droop: ≤1dB |
➢ Port VSWR: ≤1.8 ➢ NF: ≤ 2.5dB(per channel) ➢ RMS Phase Accuracy: ≤7.5 ° ➢ RMS Attenuation Accuracy: ≤1dB ➢ T/R Switching time: ≤ 200ns ➢ Efficiency: ≥25%(at 30% duty cycle) ➢ Dimensions: 89mm×52.6mm×9.5mm ➢ Weight: ≤110g ➢ RF Interface: SMP-J |
|
Особенности
➢ High output power
➢ Excellent thermal conductivity
➢ Low noise performance
➢ Supports pulsed and continuouswave modes
➢ Customizable design
X-Band DBF 20 W T/R Module
Обзор
This product is an X-band digital beamforming (DBF) T/R module featuring eight channels, with a per-channel peak pulsed power of 20 W and an intermediate frequency (IF) of 175 MHz. It is manufactured using micro-assembly technology and mainly integrates a receive downconversion module, local oscillator (LO) power divider network, transmit/receive channels, power modulation, and logic control modules. The module offers high output power, excellent thermal conductivity, low noise, and low phase variation, and supports both pulsed and continuous-wave (CW) operating modes. The product is suitable for onedimensional or two-dimensional active phased array radar systems and supports customized development.
Основные технические характеристики
|
➢ Operating Power Supply Voltage : +28V, +5.5V ➢ Operating Frequency : 9.0~10.2GHz ➢ Number of Elements : 8 ➢ 6-bit digital attenuator, Step size: 0.5 dB ➢ 6-bit phase shifter, Step size: 5.6° ➢ Receive Gain : ≥50dB ➢ Transmit Power : ≥ 43dBm ➢ In-band Transmit Ripple : ≤1.5dB ➢ Port VSWR : ≤1.8 ➢ NF: ≤ 2.8dB(per channel) |
➢ LO Frequency Range : f-175MHz ➢ LO Input Power : 2dBm±1.5dB ➢ Intermediate Frequency : 175MHz ➢ RMS Phase Accuracy : ≤6 ° ➢ RMS Attenuation Accuracy : ≤0.5dB ➢ Efficiency: ≥25%(at 30% duty cycle) ➢ Dimensions : 120mm×100mm×11mm ➢ Weight : ≤700g ➢ RF Interface : SMP-J |
|
Особенности
➢ High output power
➢ Excellent thermal conductivity
➢ Low noise performance
➢ Supports pulsed and continuouswave modes
➢ Customizable design
KU-Band 4-Channel 20W T/R Module
Обзор
This product is an KU-band analog T/R module featuring four channels, with a per-channel peak pulsed power of 20W. It is manufactured using micro-assembly technology and mainly integrates a phase-and-amplitude multifunction chip, driver amplifier chip, GaN power amplifier chip, limiter chip, low-noise amplifier chip, circulator, and power modulation chip. The module offers high output power,excellent thermal conductivity, low noise, and low phase variation. It supports both pulsed and continuous-wave (CW) operating modes.The product is suitable for one-dimensional or twodimensional active phased array radar systems and supports customized development.
Основные технические характеристики
|
➢ Operating Power Supply Voltage: +28V, +6.5V ➢ Operating Frequency: 15.0~17.0GHz ➢ Number of Elements: 4 ➢ 6-bit digital attenuator, Step size: 0.5 dB ➢ 6-bit phase shifter, Step size: 5.6° ➢ Receive Gain: ≥24dB ➢ Transmit Power: ≥ 43dBm ➢ Spurious Suppression: ≤-60dBc ➢ In-band Transmit Ripple: ≤±0.6dB ➢ Pulse Output Droop: ≤0.8dB |
➢ Port VSWR: ≤2.0 ➢ NF: ≤ 3.2dB(per channel) ➢ RMS Phase Accuracy: ≤7.5 ° ➢ RMS Attenuation Accuracy: ≤1dB ➢ T/R Switching time: ≤150ns ➢ Efficiency: ≥25%(at 30% duty cycle) ➢ Dimensions: 75mm×41mm×8mm ➢ Weight: ≤100g ➢ RF Interface: SMP-J |
 |
Особенности
➢ High output power
➢ Excellent thermal conductivity
➢ Low noise performance
➢ Supports pulsed and continuouswave modes
➢ Customizable design
KU-Band DBF 20 W T/R Module
Обзор
This product is an KU-band digital beamforming (DBF) T/R module featuring eight channels, with a per-channel peak pulsed power of 20 W and an intermediate frequency (IF) of 175 MHz. It is manufactured using micro-assembly technology and mainly integrates a receive downconversion module, local oscillator (LO) power divider network,transmit/receive channels, power modulation, and logic control modules. The module offers high output power,excellent thermal conductivity, low noise, and low phase variation, and supports both pulsed and continuous-wave(CW) operating modes. The product is suitable for onedimensional or two-dimensional active phased array radar systems and supports customized development.
Основные технические характеристики
|
➢ Operating Power Supply Voltage : +28V, +5.5V ➢ Operating Frequency : 15.0~17.0 GHz ➢ Number of Elements : 8 ➢ 6-bit digital attenuator, Step size: 0.5 dB ➢ 6-bit phase shifter, Step size: 5.6° ➢ Receive Gain : ≥50dB ➢ Transmit Power : ≥ 43dBm ➢ In-band Transmit Ripple : ≤1.5dB ➢ Port VSWR : ≤1.8 ➢ NF: ≤3.5dB(per channel) |
➢ LO Frequency Range : f-175MHz ➢ LO Input Power : 2dBm±1.5dB ➢ Intermediate Frequency : 175MHz ➢ RMS Phase Accuracy : ≤6 ° ➢ RMS Attenuation Accuracy : ≤0.5dB ➢ Efficiency: ≥25%(at 30% duty cycle) ➢ Dimensions : 150mm×82mm×13mm ➢ Weight : ≤600g ➢ RF Interface : SMP-J |
|
Особенности
➢ High output power
➢ Excellent thermal conductivity
➢ Low noise performance
➢ Supports pulsed and continuouswave modes
➢ Customizable design
